Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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NE321000 | A GaAs HJ-FET chip for ultra low-noise high-gain amplification | NEC-Electronics-Inc- | Chip | - | - | - | 48 K |
NE3210S01 | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 62 K |
NE3210S01-T1 | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 62 K |
NE3210S01-T1B | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 62 K |
UPC3210TB | Reduced noise wide band amplifier | NEC-Electronics-Inc- | - | - | - | - | 87 K |
UPC3210TB-E3 | Reduced noise wide band amplifier | NEC-Electronics-Inc- | - | - | - | - | 87 K |
UPC3211GR | Digital CATV return path AGC amplifier | NEC-Electronics-Inc- | - | - | - | - | 137 K |
UPC3211GR | Digital CATV return path AGC amplifier | NEC-Electronics-Inc- | - | - | - | - | 137 K |
UPC3211GR-E1 | Digital CATV return path AGC amplifier | NEC-Electronics-Inc- | - | - | - | - | 137 K |
X24321S8I-1,8 | 32K (4K x 8bit) 400KHz 2-wire serial E2PROM | distributor | SOIC8 | 8 | -40°C | 85°C | 66 K |
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