| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4S643232E-TC45 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 222MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
| K4S643232E-TC50 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 200MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
| K4S643232E-TC55 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 183MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
| K4S643232E-TC60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
| K4S643232E-TC70 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 143MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
| K4S643232E-TE50 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 200MHz | Samsung-Electronic | TSOP II | 86 | -25°C | 85°C | 101 K |
| K4S643232E-TL45 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 222MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
| K4S643232E-TL50 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 200MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
| K4S643232E-TL55 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 183MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
| K4S643232E-TL60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
| << [66] [67] [68] [69] [70] 71 [72] [73] [74] [75] [76] >> |
|---|
