| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962-0323601QXA | 128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish hot solder dipped. | distributor | Ceramic flatpack | 68 | -55°C | 125°C | 180 K |
| 5962-0323601QXC | 128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish gold. | distributor | Ceramic flatpack | 68 | -55°C | 125°C | 180 K |
| 5962-0323601QXC | 128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish gold. | distributor | Ceramic flatpack | 68 | -55°C | 125°C | 180 K |
| 5962-0323601VXA | 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish hot solder dipped. | distributor | Ceramic flatpack | 68 | -55°C | 125°C | 180 K |
| 5962-0323601VXC | 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish gold. | distributor | Ceramic flatpack | 68 | -55°C | 125°C | 180 K |
| K4D263238A-GC33 | 128Mbit DDR SDRAM, SSTL_2 interface, 300MHz | Samsung-Electronic | FBGA | 144 | 0°C | 65°C | 298 K |
| T35L3232B-3.8Q | 0.5 to 4.6V; 1.0W; 32K x 32 SRAM: pipelined and flow- through burst mode | distributor | QFP | 100 | 0°C | 70°C | 261 K |
| T35L3232B-3.8Q | 0.5 to 4.6V; 1.0W; 32K x 32 SRAM: pipelined and flow- through burst mode | distributor | QFP | 100 | 0°C | 70°C | 261 K |
| T35L3232B-4T | 0.5 to 4.6V; 1.0W; 32K x 32 SRAM: pipelined and flow- through burst mode | distributor | TQFP | 100 | 0°C | 70°C | 261 K |
| T35L3232B-4T | 0.5 to 4.6V; 1.0W; 32K x 32 SRAM: pipelined and flow- through burst mode | distributor | TQFP | 100 | 0°C | 70°C | 261 K |
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