Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
K4S643232C-TC10 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 1 M |
K4S643232C-TC70 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 143MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 1 M |
K4S643232C-TC80 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 125MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 1 M |
K4S643232C-TL10 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 1 M |
MAX3232CPE | 3.0V to 5.5V, low-power, up to 1Mbps, true RS-232 transceiver using four 0.1microF external capacitor. Low supply current: 300microA. Guaranteed data rate: 120kbps. | Maxim-Integrated-Producs | Plastic DIP | 16 | 0°C | 70°C | 268 K |
MAX3232CSE | 3.0V to 5.5V, low-power, up to 1Mbps, true RS-232 transceiver using four 0.1microF external capacitor. Low supply current: 300microA. Guaranteed data rate: 120kbps. | Maxim-Integrated-Producs | Narrow SO | 16 | 0°C | 70°C | 268 K |
MAX3232CWE | 3.0V to 5.5V, low-power, up to 1Mbps, true RS-232 transceiver using four 0.1microF external capacitor. Low supply current: 300microA. Guaranteed data rate: 120kbps. | Maxim-Integrated-Producs | Wide SO | 16 | 0°C | 70°C | 268 K |
MSC23232CL-70DS16 | 2,097,152-word x 32-bit DRAM module | distributor | - | 72 | 0°C | 70°C | 616 K |
MSC23232CL-80BS16 | 2,097,152-word x 32-bit DRAM module | distributor | - | 72 | 0°C | 70°C | 616 K |
MSC23232CL-80DS16 | 2,097,152-word x 32-bit DRAM module | distributor | - | 72 | 0°C | 70°C | 616 K |
[1] 2 [3] |
---|