| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HY-3246 | Thyratron. Peak anode voltage epy 45 kV, peak anode current ib 15000 a, average anode current lb 2 Adc, RMS anode current lb 45 Aac. Seated height x tube width 5.75 x 3 inches. | distributor | - | 4 | - | - | 49 K |
| RA-3.324DH | 1W DC/DC converter with 3.3V input, +-24/+-21mA output, 2kV isolation | distributor | DIP | 14 | -40°C | 85°C | 87 K |
| RA-3.324SH | 1W DC/DC converter with 3.3V input, 24V/42mA output, 2kV isolation | distributor | DIP | 14 | -40°C | 85°C | 87 K |
| RB-3.324SH | 1W DC/DC converter with 3.3V input, 24/42mA output, 2kV isolation | distributor | SIP | 7 | -40°C | 85°C | 90 K |
| VS3244Q | High speed CMOS Vswitch dual 4-bit bus switches | distributor | QSOP | 20 | -40°C | 85°C | 56 K |
| VS3244QX | High speed CMOS Vswitch dual 4-bit bus switches | distributor | QSOP | 20 | -40°C | 85°C | 56 K |
| VS3245Q | High speed CMOS Vswitch 8-bit bus switches | distributor | QSOP | 20 | -40°C | 85°C | 55 K |
| VS3245QX | High speed CMOS Vswitch 8-bit bus switches | distributor | QSOP | 20 | -40°C | 85°C | 55 K |
| VTE3324LA | GaAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm). | distributor | - | 2 | -40°C | 100°C | 22 K |
| VTT3324LA | .025 inche NPN phototransistor. Light current(min) 4.0 mA at H = 20 fc, Vce = 5.0 V. | distributor | - | 2 | -40°C | 100°C | 22 K |
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