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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N3253NPN switching type.Fairchild-Semiconductor--0°C200°C353 K
ATmega32532-Kbyte self-programming Flash Program Memory, 2-Kbyte SRAM, 1-KByte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. Up to 16 MIPS throughput at 16 MHz. 1.8 - 5.5 Volt Operation.ATMEL-Corporation---2 M
ATmega3250 32-Kbyte self-programming Flash Program Memory, 2-Kbyte SRAM, 1-KByte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. Up to 16 MIPS throughput at 16 MHz. 1.8 - 5.5 Volt Operation.ATMEL-Corporation---2 M
ATmega3250P 32-Kbyte self-programming Flash Program Memory, 2-Kbyte SRAM, 1-KByte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. Up to 16 MIPS throughput at 16 MHz. 1.8 - 5.5 Volt Operation.ATMEL-Corporation---2 M
ATmega3250PV 32-Kbyte self-programming Flash Program Memory, 2-Kbyte SRAM, 1-KByte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. Up to 16 MIPS throughput at 16 MHz. 1.8 - 5.5 Volt Operation.ATMEL-Corporation---2 M
ATmega325P 32-Kbyte self-programming Flash Program Memory, 2-Kbyte SRAM, 1-KByte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. Up to 16 MIPS throughput at 16 MHz. 1.8 - 5.5 Volt Operation.ATMEL-Corporation---2 M
ATmega325PV 32-Kbyte self-programming Flash Program Memory, 2-Kbyte SRAM, 1-KByte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. Up to 16 MIPS throughput at 16 MHz. 1.8 - 5.5 Volt Operation.ATMEL-Corporation---2 M
MCM32512S10512Kx32 bit dynamic random access memory module. Fast access time 100ns.MotorolaSIMM720°C70°C549 K
MCM32512SG10512Kx32 bit dynamic random access memory module. Fast access time 100ns.MotorolaGold pad SIMM720°C70°C549 K
MCM32512SG80512Kx32 bit dynamic random access memory module. Fast access time 80ns.MotorolaGold pad SIMM720°C70°C549 K
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