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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IS61LV632A-6PQI32K x 32 synchronous fast static RAMdistributorPQFP100-40°C85°C120 K
IS61LV632A-7PQI32K x 32 synchronous fast static RAMdistributorPQFP100-40°C85°C120 K
K4S280432A-TC/L104M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3).Samsung-ElectronicTSOP (II)540°C70°C109 K
K4S280432A-TC/L1H4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2).Samsung-ElectronicTSOP (II)540°C70°C109 K
K4S280432A-TC/L1L4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3).Samsung-ElectronicTSOP (II)540°C70°C109 K
K4S280432A-TC/L754M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 133 MHz (CL=3).Samsung-ElectronicTSOP (II)540°C70°C109 K
K4S280432A-TC/L804M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz (CL=3).Samsung-ElectronicTSOP (II)540°C70°C109 K
K4S280832A-TC/L104M x 8bit x 4 banks synchronous DRAM. Max freq. 66 MHz(CL=2&3). Interface LVTTLSamsung-ElectronicTSOP (II)540°C70°C108 K
K4S280832A-TC/L804M x 8bit x 4 banks synchronous DRAM. Max freq. 125 MHz(CL=3). Interface LVTTLSamsung-ElectronicTSOP (II)540°C70°C108 K
K4S561632A-TC/L754M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C127 K
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