Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IS61LV632A-6PQI | 32K x 32 synchronous fast static RAM | distributor | PQFP | 100 | -40°C | 85°C | 120 K |
IS61LV632A-7PQI | 32K x 32 synchronous fast static RAM | distributor | PQFP | 100 | -40°C | 85°C | 120 K |
K4S280432A-TC/L10 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 109 K |
K4S280432A-TC/L1H | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 109 K |
K4S280432A-TC/L1L | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 109 K |
K4S280432A-TC/L75 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 133 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 109 K |
K4S280432A-TC/L80 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 109 K |
K4S280832A-TC/L10 | 4M x 8bit x 4 banks synchronous DRAM. Max freq. 66 MHz(CL=2&3). Interface LVTTL | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 108 K |
K4S280832A-TC/L80 | 4M x 8bit x 4 banks synchronous DRAM. Max freq. 125 MHz(CL=3). Interface LVTTL | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 108 K |
K4S561632A-TC/L75 | 4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 127 K |
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