| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HWL32NPA | 2.8 W L-band GaAs power FET | distributor | SOT | 3 | - | - | 117 K |
| IXFK32N50Q | 500V HiPerFET power MOSFET Q-class | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 112 K |
| IXFR32N50Q | 500V HiPerFET power MOSFET | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 92 K |
| IXFX32N50Q | 500V HiPerFET power MOSFET Q-class | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 112 K |
| IXGH32N60BD1 | 600V HiPerFAST IGBT with diode | distributor | - | 3 | -55°C | 150°C | 69 K |
| IXGR32N60C | 600V HiPerFAST IGBT | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 100 K |
| IXGR32N60CD1 | 600V HiPerFAST IGBT with diode | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 127 K |
| IXGT32N60BD1 | 600V HiPerFAST IGBT with diode | distributor | - | 3 | -55°C | 150°C | 69 K |
| L432NA | 1.24V low-voltage adjustable precision shunt regulator, tolerance 0.5% | distributor | - | 3 | -65°C | 150°C | 283 K |
| L432NB | 1.24V low-voltage adjustable precision shunt regulator, tolerance 1% | distributor | - | 3 | -65°C | 150°C | 283 K |
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