Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HGTA32N60E2 | 32A, 600V N-Channel IGBT | Intersil-Corporation | - | - | - | - | 31 K |
HGTG32N60E2 | 32A, 600V N-Channel IGBT | Intersil-Corporation | - | - | - | - | 33 K |
LC7232N-8819 | Single-chip PLL and controller | SANYO-Electric-Co--Ltd- | QIP80A | 80 | -40°C | 85°C | 523 K |
SN74LS32N3 | QUAD 2-INPUT POSITIVE-OR GATES | Texas-Instruments | N | 14 | 0°C | 70°C | 250 K |
SN74LS32NSR | QUAD 2-INPUT POSITIVE-OR GATES | Texas-Instruments | NS | 14 | 0°C | 70°C | 250 K |
SN74LS32NSR | QUAD 2-INPUT POSITIVE-OR GATES | Texas-Instruments | NS | 14 | 0°C | 70°C | 250 K |
SN74S32N3 | QUAD 2-INPUT POSITIVE-OR GATES | Texas-Instruments | N | 14 | 0°C | 70°C | 250 K |
STP32N05L | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
STP32N06L | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
STP32N06LFI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
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