Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRFU3303 | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.031 Ohm, ID = 33A | International-Rectifier | - | 3 | -55°C | 150°C | 112 K |
ZLDO330TB | 3.3 V, ultra low dropout regulator | Zetex-Semiconductor | SM | 8 | -40°C | 85°C | 86 K |
ZLDO330TB | 3.3 V, ultra low dropout regulator | Zetex-Semiconductor | SM | 8 | -40°C | 85°C | 86 K |
ZVN3306A | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 46 K |
ZVN3306A | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 46 K |
ZVN3306F | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 94 K |
ZVN3306F | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 94 K |
ZVP3306A | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 81 K |
ZVP3306A | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 81 K |
ZVP3306F | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 109 K |
ZVP3306F | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 109 K |
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