Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF5Y3315CM | HEXFET power MOSFET thru-hole. BVDSS = 150V, RDS(on) = 0.085 Ohm, ID = 18A | International-Rectifier | - | 3 | -55°C | 150°C | 106 K |
ZM33164C | Supply voltage monitor | Zetex-Semiconductor | - | 3 | -40°C | 85°C | 131 K |
ZM33164C | Supply voltage monitor | Zetex-Semiconductor | - | 3 | -40°C | 85°C | 131 K |
ZVN3310A | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 78 K |
ZVN3310A | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 78 K |
ZVN3310F | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 78 K |
ZVN3310F | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 78 K |
ZVP3310A | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 82 K |
ZVP3310A | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 82 K |
ZVP3310F | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 112 K |
ZVP3310F | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 112 K |
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