| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N3414 | 500mW NPN silicon transistor | distributor | - | 3 | -55°C | 150°C | 48 K |
| 2N3417 | 500mW NPN silicon transistor | distributor | - | 3 | -55°C | 150°C | 138 K |
| GMS34140TK | Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer | distributor | DIP | 24 | -20°C | 70°C | 328 K |
| GMS34140TM | Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer | distributor | DIP | 24 | -20°C | 70°C | 328 K |
| IRF3415 | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.042 Ohm, ID = 43A | International-Rectifier | - | 3 | -55°C | 175°C | 94 K |
| IRF3415L | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.042 Ohm, ID = 43A | International-Rectifier | - | 3 | -55°C | 175°C | 156 K |
| IRF3415S | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.042 Ohm, ID = 43A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 156 K |
| IRF5M3415 | HEXFET power MOSFET thru-hole. BVDSS = 150V, RDS(on) = 0.049 Ohm, ID = 35A | International-Rectifier | - | 3 | -55°C | 150°C | 113 K |
| IRF5N3415 | HEXFET power MOSFET surface mount. BVDSS = 150V, RDS(on) = 0.042 Ohm, ID = 37.5A | International-Rectifier | - | 3 | -55°C | 150°C | 117 K |
| IRFP3415 | HEXFET power MOSFET. VDSS = 150 V, RDS(on) = 0.042 Ohm, ID = 43 A | International-Rectifier | - | 3 | -55°C | 175°C | 92 K |
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