| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5350B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 13V, Izt = 100mA | distributor | - | 2 | -55°C | 150°C | 306 K |
| CM3500 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward current for resistive load 35A. Non-repetive peak forward surge current at rated load 400A. | distributor | - | 4 | -55°C | 150°C | 65 K |
| CM3500 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward current for resistive load 35A. Non-repetive peak forward surge current at rated load 400A. | distributor | - | 4 | -55°C | 150°C | 65 K |
| CM3501 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load 35A. Non-repetive peak forward surge current at rated load 400A. | distributor | - | 4 | -55°C | 150°C | 65 K |
| MDS350L | 350 W, 45 V, 1030-1090 MHz common base transistor | distributor | 55KT | 3 | - | - | 13 K |
| RBV3506 | 600 V, 35 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 18 K |
| RBV3508 | 800 V, 35 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 18 K |
| SB350S | 50 V, 3.0 A, schottky barrier rectifier diode | distributor | D2A | 2 | -65°C | 150°C | 28 K |
| TC54VC3501ECTTR | Voltage detector, CMOS output, 3.5V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
| TC54VN3501ECTTR | Voltage detector, Nch open drain, 3.5V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
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