Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5351B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA | distributor | - | 2 | -55°C | 150°C | 306 K |
BR3510W | 1000 V, 35 A silicon bridge rectifier | distributor | BR | 4 | -40°C | 150°C | 19 K |
FBR3510 | 1000 V, 35 A, fast recovery bridge rectifier | distributor | BR | 4 | -50°C | 150°C | 21 K |
MR3510 | 1000 V, 35 A, automotive rectifier diode | distributor | - | 2 | -65°C | 175°C | 41 K |
MR3510L | 1000 V, 35 A, automotive rectifier diode | distributor | - | 2 | -65°C | 175°C | 16 K |
MR3512L | 1200 V, 35 A, automotive rectifier diode | distributor | - | 2 | -65°C | 175°C | 16 K |
PBD3517/1NS | Stepper motor drive circuit | Ericsson-Microelectronics | DIP | 16 | -20°C | 125°C | 135 K |
PBD3517/1SOS | Stepper motor drive circuit | Ericsson-Microelectronics | SO | 16 | -20°C | 125°C | 135 K |
PBD3517/1SOT | Stepper motor drive circuit | Ericsson-Microelectronics | SO | 16 | -20°C | 125°C | 135 K |
RBV3510 | 1000 V, 35 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 18 K |
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