Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5355A | 18 V, 5 W silicon zener diode | distributor | D2A | 2 | -55°C | 175°C | 31 K |
1N5355B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 18V, Izt = 65mA | distributor | - | 2 | -55°C | 150°C | 306 K |
2N3553 | Silicon planar epitaxial overlay transistor | Philips-Semiconductors | - | 3 | -65°C | 200°C | 45 K |
HVC355B | 15 V, variable capacitance diode | distributor | SOD | 2 | - | - | 42 K |
KPC355NT | Photocoupler, CTR min 600%, isolation 3750V, for telephone sets, signal transmission between circuits of different potentials and impedances | distributor | - | 4 | -30°C | 100°C | 670 K |
LF355D | Wide bandwidth single J-TET operational amplifier | SGS-Thomson-Microelectronics | SO | 8 | 0°C | 70°C | 250 K |
LF355N | Wide bandwidth single J-TET operational amplifier | SGS-Thomson-Microelectronics | DIP | 8 | 0°C | 70°C | 250 K |
MMBD355LT1 | 7 V, dual hot carrier mixer diode | distributor | - | 3 | -55°C | 150°C | 45 K |
MSK3554 | High speed, wideband operational amplifier | distributor | TO | 8 | -40°C | 85°C | 270 K |
MSK3554B | High speed, wideband operational amplifier | distributor | TO | 8 | -55°C | 125°C | 270 K |
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