Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5360A | 25 V, 5 W silicon zener diode | distributor | D2A | 2 | -55°C | 175°C | 31 K |
1N5360B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 25V, Izt = 50mA | distributor | - | 2 | -55°C | 150°C | 306 K |
3EZ360D5 | 360 V, 3 W, silicon zener diode | distributor | - | 2 | -55°C | 175°C | 37 K |
SB360S | 60 V, 3.0 A, schottky barrier rectifier diode | distributor | D2A | 2 | -65°C | 150°C | 28 K |
TC54VC3601ECBTR | Voltage detector, CMOS output, 3.6V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
TC54VC3601ECTTR | Voltage detector, CMOS output, 3.6V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
TC54VC3601EMBTR | Voltage detector, CMOS output, 3.6V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
TC54VN3601ECBTR | Voltage detector, Nch output, 3.6V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
TC54VN3601ECTTR | Voltage detector, Nch open drain, 3.6V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
TC54VN3601EMBTR | Voltage detector, Nch open drain, 3.6V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
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