| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5361B | 27V 5W zener diode | distributor | Molded Plastic | 2 | -55°C | 175°C | 63 K |
| 1N5361B | 27 V, 50 mA, 5 W glass passivated zener diode | distributor | - | 2 | -55°C | 175°C | 52 K |
| 1N5361B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 27V, Izt = 50mA | distributor | - | 2 | -55°C | 150°C | 306 K |
| 1N5361B | 27 V, 0.5 A, 5 W, glass passivated junction silicon zener diode | distributor | - | 2 | -55°C | 150°C | 267 K |
| KA3361BD | Circuit for telephone | Samsung-Electronic | SOP | 16 | -20°C | 70°C | 78 K |
| MC3361BD | Low power narrowband FM IF | Motorola | SO | 16 | -30°C | 70°C | 180 K |
| MC3361BP | Low voltage/power narrow band FM IF. Operating voltage: 2.5-7.0V. Operating current: 4.0mA(squelch off V12=2V), 6.0mA(squelch on V12=GND). | distributor | SOP | 16 | -20°C | 70°C | 35 K |
| MC3361BP | Low voltage/power narrow band FM IF. Operating voltage: 2.5-7.0V. Operating current: 4.0mA(squelch off V12=2V), 6.0mA(squelch on V12=GND). | distributor | DIP | 16 | -20°C | 70°C | 35 K |
| MC3361BP | Low power narrowband FM IF | Motorola | DIP | 16 | -30°C | 70°C | 180 K |
| SMBJ5361B | Pd=5.0W, Vz=27V zener diode | distributor | HSMB | - | - | - | 1 M |
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