Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N3620 | 25A silicon power rectifier, 400V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 128 K |
1N3621 | 25A silicon power rectifier, 500V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 128 K |
1N3622 | 25A silicon power rectifier, 600V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 128 K |
1N3623 | 25A silicon power rectifier, 800V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 128 K |
1N3624 | 25A silicon power rectifier, 1000V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 128 K |
1N5362B | 28 V, 5 W, glass passivated junction silicon zener diode | distributor | - | 2 | -55°C | 150°C | 267 K |
BS-A362RD | Green, anode, single digit LED display | distributor | SD | - | - | - | 199 K |
BS-C362RD | Green, cathode, single digit LED display | distributor | SD | - | - | - | 199 K |
MCM36200S80 | 2Mx36 bit dynamic random access memory module. Fast access time 80ns. | Motorola | SIMM | 72 | 0°C | 70°C | 580 K |
MCM36200SG80 | 2Mx36 bit dynamic random access memory module. Fast access time 80ns. | Motorola | Gold pad SIMM | 72 | 0°C | 70°C | 580 K |
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