| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5363B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 30V, Izt = 40mA | distributor | - | 2 | -55°C | 150°C | 306 K |
| 1N5363B | 30 V, 0.5 A, 5 W, glass passivated junction silicon zener diode | distributor | - | 2 | -55°C | 150°C | 267 K |
| EM636327JT-10 | 100MHz 512 x 32 high speed synchronous graphic DRAM (SGRAM) | distributor | TQFP | 100 | 0°C | 70°C | 1 M |
| EM636327Q-10 | 100MHz 512 x 32 high speed synchronous graphic DRAM (SGRAM) | distributor | QFP | 100 | 0°C | 70°C | 1 M |
| EM636327Q-8 | 125MHz 512 x 32 high speed synchronous graphic DRAM (SGRAM) | distributor | QFP | 100 | 0°C | 70°C | 1 M |
| EM636327R-10 | 100MHz 512 x 32 high speed synchronous graphic DRAM (SGRAM) | distributor | QFP | 100 | 0°C | 70°C | 1 M |
| EM636327R-8 | 125MHz 512 x 32 high speed synchronous graphic DRAM (SGRAM) | distributor | QFP | 100 | 0°C | 70°C | 1 M |
| EM636327TQ-10 | 100MHz 512 x 32 high speed synchronous graphic DRAM (SGRAM) | distributor | TQFP | 100 | 0°C | 70°C | 1 M |
| EM636327TQ-8 | 125MHz 512 x 32 high speed synchronous graphic DRAM (SGRAM) | distributor | TQFP | 100 | 0°C | 70°C | 1 M |
| HVC363A | 35 V, variable capacitance diode | distributor | SOD | 2 | - | - | 29 K |
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