| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5364B | 33 V, 5 Watt surmetic 40 silicon zener diode | distributor | - | 2 | -65°C | 200°C | 428 K |
| CMPT3640 | PNP silicon transistor | distributor | SOT | 3 | -65°C | 150°C | 79 K |
| CMPT3646 | NPN silicon transistor | distributor | SOT | 3 | -65°C | 150°C | 79 K |
| CMPT3649 | NPN silicon transistor | distributor | SOT | 3 | -65°C | 150°C | 87 K |
| M62364FP | 8-bit 8ch A-D converter | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 24 | -20°C | 75°C | 41 K |
| MAX364EPE | Precision, quad, SPST, normally closed (NC) analog switch. | Maxim-Integrated-Producs | Plastic DIP | 16 | -40°C | 85°C | 89 K |
| MAX364EPE | Precision, quad, SPST, normally closed (NC) analog switch. | Maxim-Integrated-Producs | Plastic DIP | 16 | -40°C | 85°C | 89 K |
| MAX364ESE | Precision, quad, SPST, normally closed (NC) analog switch. | Maxim-Integrated-Producs | Narrow SO | 16 | -40°C | 85°C | 89 K |
| MGFC41V3642 | 3.6-4.2 GHz band 12W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 94 K |
| MGFC45V3642A | 3.6-4.2GHz band 32W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 174 K |
| RF2364PCBA | 3V PCS noise amplifier | RF-Micro-Devices-RFMD | SOT | 5 | -40°C | 85°C | 108 K |
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