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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N5365A36 V, 5 W silicon zener diodedistributorD2A2-55°C175°C31 K
1N5365BGlass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 36V, Izt = 30mAdistributor-2-55°C150°C306 K
2035-6365-002-4 GHz, 3 dB hybrid couplerM-A-COM---manufacturer-of-RF----255 K
2SC3650NPN transistor for low-frequency general-purpose amplifier applicationsSANYO-Electric-Co--Ltd-PCP3-55°C150°C123 K
2SC3651NPN transistor for low-frequency general-purpose amplifier applicationsSANYO-Electric-Co--Ltd-PCP3-55°C150°C97 K
IN74HC365DHex 3-state noninverting buffer with common enables, high-performance silicon-gate CMOSdistributorSOIC16-55°C125°C103 K
IN74HC365NHex 3-state noninverting buffer with common enables, high-performance silicon-gate CMOSdistributorPlastic DIP16-55°C125°C103 K
V436516R04VATG-10PC3.3V 16M x 64 (using 8M x 16) high performance PC100 unbuffered SDRAMMosel-VitelicTSOP1680°C70°C223 K
V436516R04VATG-753.3V 16M x 64 (using 8M x 16) high performance PC133 unbuffered SDRAM moduleMosel-VitelicTSOP1680°C70°C189 K
ZR36506The one chip solution for multi-mode digital camerasdistributor---40°C125°C762 K
ZR36506The one chip solution for multi-mode digital camerasdistributor---40°C125°C762 K
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