| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5366B | 39V 5W zener diode | distributor | Molded Plastic | 2 | -55°C | 175°C | 63 K |
| HA3669 | 5V 2A NPN epitaxial planar transistor for using in power amplifier applications, power switching applications | distributor | - | 3 | - | - | 30 K |
| HI3669 | Emitter to base voltage:5V 2A NPN epitaxial planar transistor for using in power amplifier applications | distributor | - | 3 | - | - | 32 K |
| HJ3669 | Emitter to base voltage:5V 2A NPN epitaxial planar transistor for using in power amplifier applications power switching applications | distributor | - | 3 | - | - | 33 K |
| HM3669 | Emitter to base voltage:5V; NPN epitaxial planar transistor for using in power amplifier applications | distributor | - | 3 | - | - | 31 K |
| SMBJ5366B | Pd=5.0W, Vz=39V zener diode | distributor | HSMB | - | - | - | 1 M |
| TDA3661AT | 45 V, Very low dropout voltage/quiescent current adjustable voltage regulator | Philips-Semiconductors | SO | 8 | -40°C | 150°C | 95 K |
| TDA3661AT | 45 V, Very low dropout voltage/quiescent current adjustable voltage regulator | Philips-Semiconductors | SO | 8 | -40°C | 150°C | 95 K |
| TDA3663 | Very low dropout voltage/quiescent current 3.3V voltage regulator | Philips-Semiconductors | SO | 4 | -40°C | 150°C | 102 K |
| TDA3663AT | Very low dropout voltage/quiescent current 3.3V voltage regulator | Philips-Semiconductors | SO | 8 | -40°C | 150°C | 102 K |
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