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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N5369B51 V, 25 mA, 5 W glass passivated zener diodedistributor-2-55°C175°C52 K
1N5369B51 V, 5 W, glass passivated junction silicon zener diodedistributor-2-55°C150°C267 K
IDT72V3690L10PF3.3V, high-density, low power, 32768 x 36-bit FIFO, 10nsIntegrated-Device-Technology-Inc-TQFP1280°C70°C567 K
IDT72V3690L15PF3.3V, high-density, low power, 32768 x 36-bit FIFO, 15nsIntegrated-Device-Technology-Inc-TQFP1280°C70°C567 K
IDT72V3690L15PFI3.3V, high-density, low power, 32768 x 36-bit FIFO, 15nsIntegrated-Device-Technology-Inc-TQFP128-40°C85°C567 K
OPA2369 1.8V, 1uA max, Zero-Crossover Rail-to-Rail I/O Operational AmplifierTexas-Instruments---534 K
OPA3691.8V, 1uA max, Zero-Crossover Rail-to-Rail I/O Operational AmplifierTexas-Instruments---534 K
OPA369AIDCKR 1.8V, 1uA max, Zero-Crossover Rail-to-Rail I/O Operational AmplifierTexas-Instruments---534 K
PN2369ANPN switching transistor.Philips-SemiconductorsSOT543-55°C150°C52 K
PN2369ANPN switching transistor.Philips-Semiconductors-3-55°C150°C52 K
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