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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N3708360mW NPN silicon general purpose AF transistordistributor-3-55°C150°C137 K
2SC3708NPN transistor for low-frequency driver applicationsSANYO-Electric-Co--Ltd--3-55°C150°C127 K
IRF3708LHEXFET power MOSFET. VDSS = 30V, RDS(on) = 12 mOhm, ID = 62AInternational-Rectifier-3-55°C175°C138 K
IRFR3708HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12.5mOhm, ID = 61AInternational-Rectifier-3-55°C175°C129 K
IRFU3708HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12.5mOhm, ID = 61AInternational-Rectifier-3-55°C175°C129 K
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