| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N3711 | 360mW NPN silicon general purpose AF transistor | distributor | - | 3 | -55°C | 150°C | 137 K |
| IRF3711L | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110A | International-Rectifier | - | 3 | -55°C | 150°C | 245 K |
| IRF3711S | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 245 K |
| IRFU3711 | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.5mOhm, ID = 110A | International-Rectifier | - | 3 | -55°C | 175°C | 239 K |
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