Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5374A | 75 V, 5 W silicon zener diode | distributor | D2A | 2 | -55°C | 175°C | 31 K |
2SC3747 | NPN transistors for 60V/7A high-speed switching applications | SANYO-Electric-Co--Ltd- | - | 3 | -55°C | 150°C | 95 K |
2SC3748 | NPN transistor 60V/10A for high-speed switching applications | SANYO-Electric-Co--Ltd- | - | 3 | -55°C | 150°C | 94 K |
2SC3749 | NPN transistor, for 500V/3A switching regulator applications | SANYO-Electric-Co--Ltd- | - | 3 | -55°C | 150°C | 100 K |
IN74AC374DW | Octal 3-state noninverting D flip-flop high-speed silicon-gate CMOS | distributor | SOIC | 20 | -40°C | 85°C | 205 K |
IN74ACT374DW | Octal 3-state noninverting D flip-flop high-speed silicon-gate CMOS | distributor | SOIC | 20 | -40°C | 85°C | 205 K |
IN74ACT374N | Octal 3-state noninverting D flip-flop high-speed silicon-gate CMOS | distributor | Plastic DIP | 20 | -40°C | 85°C | 205 K |
IN74LV374D | Octal D-time flip-flop; positive edge-trigger (3-state) | distributor | SOIC | 20 | -40°C | 125°C | 524 K |
IN74LV374N | Octal D-time flip-flop; positive edge-trigger (3-state) | distributor | Plastic DIP | 20 | -40°C | 125°C | 524 K |
VTE3374LA | GaALAs infrared emitting diode. Irradiance(typ) 5.2 mW/cm2 (distance 10.16 mm, diameter 2.1 mm). | distributor | - | 2 | -40°C | 100°C | 25 K |
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