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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
5962-8853901EA18V; 450mW; precision instrumentation amplifierAnalog-DevicesDIP16-40°C85°C414 K
5962-8983901RAHigh performance E2CMOS PLD generic array logic, 30nsLattice-Semiconductor-CorporationSMD#--55°C125°C108 K
5962-9563901MGA+-18V; precision, unity-gain differential amplifier. For summing and instrumentation amplifiers, balanced line receivers, current-voltage conversion, absolute volue amplifierAnalog-DevicesHeader8-50°C125°C292 K
5962-9653901VCXRadHard MSI: SMD. Quadruple 2-input exclusive OR gates. Class V, QML. Lead finish optional. Total dose none.distributorCeramic DIP14-55°C125°C10 M
5962-9683901MPA12.6V; 160MHz rail-to-rail amplifier with disable. For power sensitive high speed systems, video switches, distribution amplifiers, A/D driverAnalog-DevicesCERDIP8-55°C125°C284 K
JM38510/13901BCA18V; 500mW; internally trimmed precision IC multiplier for high quality analog signal processing and diffrential ratio and percentage computationsAnalog-DevicesDIP14-55°C125°C177 K
JM38510/13901BCA18V; 500mW; internally trimmed precision IC multiplier for high quality analog signal processing and diffrential ratio and percentage computationsAnalog-DevicesDIP14-55°C125°C177 K
JM38510/13901BIA18V; 500mW; internally trimmed precision IC multiplier for high quality analog signal processing and diffrential ratio and percentage computationsAnalog-DevicesHeader10-55°C125°C177 K
TC54VC3901EZBVoltage detector. Detected voltage 3.9V. Output form: CMOS output . Tolerance +-1.0%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC54VN3901EZBVoltage detector. Detected voltage 3.9V. Output form: Nch open drain. Tolerance +-1.0%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
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