Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
FSS13A0D | 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 71 K |
FSS13A0R | 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 71 K |
FSS23A0R | 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
FSYE13A0D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 55 K |
FSYE13A0R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 55 K |
FSYE23A0D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 57 K |
FSYE23A0R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 57 K |
FSYE913A0D | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 73 K |
FSYE913A0R | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 73 K |
FSYE923A0R | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 70 K |
[1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
---|