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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HY51V18163HGJ-5Dynamic RAM organized 1,048,576 words x 16bit, 50nsdistributorSOJ420°C70°C107 K
HY51V18163HGJ-6Dynamic RAM organized 1,048,576 words x 16bit, 60nsdistributorSOJ420°C70°C107 K
HY51V18163HGJ-7Dynamic RAM organized 1,048,576 words x 16bit, 70nsdistributorSOJ420°C70°C107 K
HY51V18163HGJ-7Dynamic RAM organized 1,048,576 words x 16bit, 70nsdistributorSOJ420°C70°C107 K
HY51VS18163HGJ-5Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50nsdistributorSOJ420°C70°C107 K
HY51VS18163HGJ-6Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60nsdistributorSOJ420°C70°C107 K
HY51VS18163HGJ-7Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70nsdistributorSOJ420°C70°C107 K
HY51VS18163HGLJ-5Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low powerdistributorSOJ420°C70°C107 K
HY51VS18163HGLJ-6Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low powerdistributorSOJ420°C70°C107 K
M38227E3HGPRAM size: 1024 bytes; single-chip 8-bit CMOS microcomputerMitsubishi-Electric-Corporation-Semiconductor-GroupQFP80-20°C85°C998 K
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