| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTB33N10E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 266 K |
| MTB3N100E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 262 K |
| MTP33N10E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 240 K |
| MTP3N100E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 206 K |
| MTW33N10E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 227 K |
| OM3N100SA | 1000V; up to 6 Amp, N-channel MOSFET | distributor | - | 4 | -55°C | 150°C | 40 K |
| SD253N10S15MV | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 448 K |
| SD253N10S15PBV | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 448 K |
| SD253N10S15PSV | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 448 K |
| SD253N10S15PV | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 448 K |
| [1] [2] [3] [4] [5] [6] 7 [8] [9] [10] |
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