| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXTA3N120 | 1200V high volatge power MOSFET | distributor | - | 3 | -55°C | 150°C | 102 K |
| IXTP3N120 | 1200V high volatge power MOSFET | distributor | - | 3 | -55°C | 150°C | 102 K |
| MK45H03N12 | Very fast CMOS 2K x 9 BiPORT FIFO, 120ns | SGS-Thomson-Microelectronics | PDIP | 28 | 0°C | 70°C | 696 K |
| MK45H03N12 | Very fast CMOS 2K x 9 BiPORT FIFO, 120ns | SGS-Thomson-Microelectronics | PSDIP | 28 | 0°C | 70°C | 696 K |
| MK45H13N12 | Very fast CMOS 2K x 9 BiPORT FIFO, 120ns | SGS-Thomson-Microelectronics | PDIP | 28 | 0°C | 70°C | 696 K |
| MK45H13N12 | Very fast CMOS 2K x 9 BiPORT FIFO, 120ns | SGS-Thomson-Microelectronics | PSDIP | 28 | 0°C | 70°C | 696 K |
| MTB3N120E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 322 K |
| MTB3N120E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 322 K |
| MTP3N120E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 252 K |
| SD453N12S20MSC | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 150°C | 518 K |
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