| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXFJ13N50 | 500V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 68 K |
| IXFK33N50 | 500V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 39 K |
| IXTC13N50 | 500V high MOSFET | distributor | ISOPLUS220 | 3 | -55°C | 150°C | 69 K |
| IXTK33N50 | 500V high current MegaMOS FET | distributor | - | 3 | -55°C | 150°C | 85 K |
| MK45H03N50 | Very fast CMOS 2K x 9 BiPORT FIFO, 50ns | SGS-Thomson-Microelectronics | PDIP | 28 | 0°C | 70°C | 696 K |
| PHB3N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
| PHB3N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
| PHP3N50 | 500 V, power MOS transistor | Philips-Semiconductors | TO | 3 | -55°C | 150°C | 53 K |
| PHP3N50 | 500 V, power MOS transistor | Philips-Semiconductors | TO | 3 | -55°C | 150°C | 53 K |
| PHP3N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
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