Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FQD3N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 575 K |
HGTD3N60C3S | TRANSISTOR IGBT TO-252 | Fairchild-Semiconductor | - | - | - | - | 227 K |
HGTP3N60C3D | TRANSISTOR IGBT TO-220 | Fairchild-Semiconductor | - | - | - | - | 327 K |
MK45H03N65 | Very fast CMOS 2K x 9 BiPORT FIFO, 65ns | SGS-Thomson-Microelectronics | PDIP | 28 | 0°C | 70°C | 696 K |
MK45H03N65 | Very fast CMOS 2K x 9 BiPORT FIFO, 65ns | SGS-Thomson-Microelectronics | PSDIP | 28 | 0°C | 70°C | 696 K |
MK45H13N65 | Very fast CMOS 2K x 9 BiPORT FIFO, 65ns | SGS-Thomson-Microelectronics | PDIP | 28 | 0°C | 70°C | 696 K |
MK45H13N65 | Very fast CMOS 2K x 9 BiPORT FIFO, 65ns | SGS-Thomson-Microelectronics | PSDIP | 28 | 0°C | 70°C | 696 K |
PHP3N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 79 K |
PHX3N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
PHX3N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
[1] [2] 3 [4] [5] [6] |
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