Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HGT1S3N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 130 K |
HGT1S3N60A4S | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 156 K |
HGT1S3N60B3DS | 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 154 K |
HGT1S3N60C3DS | TRANSISTOR.IGBT TO-263 | Fairchild-Semiconductor | - | - | - | - | 327 K |
HGTD3N60A4S | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 156 K |
HGTD3N60C3S | TRANSISTOR IGBT TO-252 | Fairchild-Semiconductor | - | - | - | - | 227 K |
HGTP3N60A4 | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 156 K |
HGTP3N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 130 K |
MTB3N60E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 74 K |
MTP3N60E | TMOS E-FET high energy power FET | Motorola | - | 4 | -55°C | 150°C | 183 K |
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