Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
CD4000BMS | Radiation Hardened CMOS NOR Gate | Intersil-Corporation | - | - | - | - | 143 K |
FG4000BX-90DA | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 65 K |
HCF4000B | NOR GATE | SGS-Thomson-Microelectronics | - | - | - | - | 289 K |
HEF4000BD | Dual 3-input NOR gate and inverter | Philips-Semiconductors | SOT73 | - | - | - | 77 K |
HEF4000BDB | Dual 3-input NOR gate and inverter | Philips-Semiconductors | SOT73 | - | - | - | 77 K |
HEF4000BP | Dual 3-input NOR gate and inverter | Philips-Semiconductors | SOT27 | - | - | - | 77 K |
HEF4000BPB | Dual 3-input NOR gate and inverter | Philips-Semiconductors | SOT27 | - | - | - | 77 K |
HEF4000BT | Dual 3-input NOR gate and inverter | Philips-Semiconductors | SOT108 | - | - | - | 77 K |
MX26C4000BPC-10 | Access time: 100; 4-Mbit (512K x 8) CMOS multiple-time-programmable-EPROM | distributor | DIP | 32 | 0°C | 70°C | 957 K |
MX26C4000BPC-90 | Access time: 90; 4-Mbit (512K x 8) CMOS multiple-time-programmable-EPROM | distributor | DIP | 32 | 0°C | 70°C | 957 K |
1 [2] [3] [4] [5] [6] [7] [8] |
---|