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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1.5KE400A342.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressordistributor-2-55°C175°C658 K
HM514400ALR-71,048,576-word x 4-bid DRAM, 70nsdistributorTSOP I200°C70°C1 M
HM514400ALR-81,048,576-word x 4-bid DRAM, 80nsdistributorTSOP I200°C70°C1 M
HM514400ALT-71,048,576-word x 4-bid DRAM, 70nsdistributorTSOP I200°C70°C1 M
HM514400AR-61,048,576-word x 4-bid DRAM, 60nsdistributorTSOP I200°C70°C1 M
HM514400AR-81,048,576-word x 4-bid DRAM, 80nsdistributorTSOP I200°C70°C1 M
HM514400AT-61,048,576-word x 4-bid DRAM, 60nsdistributorTSOP I200°C70°C1 M
HM514400AT-71,048,576-word x 4-bid DRAM, 70nsdistributorTSOP I200°C70°C1 M
P4KE400A342.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applicationsdistributor-2-55°C175°C844 K
P6KE400A342.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applicationsdistributor-2-55°C175°C468 K
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