| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM400HA-12H | 400 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 43 K |
| CM400HA-24H | 400 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 43 K |
| CM400HA-28H | 400 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 47 K |
| CM400HA-34H | 400 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 48 K |
| CM400HU-24H | 400 Amp IGBT module for high power switching use insolated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 44 K |
| HM621400HLJP-15 | 4M high speed SRAM (4-Mword x 1-bit), 15ns access time | distributor | plastic SOJ | 32 | 0°C | 70°C | 73 K |
| PM400HSA120 | 400 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -20°C | 150°C | 54 K |
| QM400HA-2H | 400A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 69 K |
| QM400HA-2HB | 400A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 75 K |
| QM400HA-H | 400A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 65 K |
| [1] 2 [3] [4] [5] [6] [7] |
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