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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N5401GGlass passivated rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 3.0 A.distributor-2-65°C175°C151 K
1N5401G100 V, 3 A, general purpose GPP diodedistributorDO2--50 K
1N5401GGlass passivated junction rerctifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 3.0 A.distributor-2-65°C150°C16 K
GS84018AB-166I166MHz 8.5ns 256K x 18 4Mb sync burst SRAMdistributorBGA119-40°C85°C911 K
GS84018AB-180I180MHz 8ns 256K x 18 4Mb sync burst SRAMdistributorBGA119-40°C85°C911 K
MMBT4401LT140 V, general purpose transistordistributor-3-55°C150°C265 K
MMBT5401LT1150 V, high voltage transistordistributor-3-55°C150°C164 K
RBV401G100 V, 4 A, bridge rectifierdistributor-4--55 K
RS401LSingle phase bridge rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 4.0 A.distributor-4-65°C125°C146 K
RS401MSingle phase bridge rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 4.0 A.distributor-4-65°C150°C148 K
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