Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BS616LV4021DC | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable | distributor | DICE | 48 | 0°C | 70°C | 224 K |
BS616LV4021DI | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable | distributor | DICE | 48 | -40°C | 85°C | 224 K |
IW4021BDW | 8-bit shift register, high-voltage silicon-gate CMOS | distributor | SOIC | 16 | -55°C | 125°C | 120 K |
IW4021BN | 8-bit shift register, high-voltage silicon-gate CMOS | distributor | Plastic DIP | 16 | -55°C | 125°C | 120 K |
LH540215M-20 | 512 x 18/1024 x 18 asynchronous FIFO | Sharp | TQFP | 64 | -55°C | 125°C | 423 K |
LH540215M-25 | 512 x 18/1024 x 18 asynchronous FIFO | Sharp | TQFP | 64 | -55°C | 125°C | 423 K |
LH540215M-35 | 512 x 18/1024 x 18 asynchronous FIFO | Sharp | TQFP | 64 | -55°C | 125°C | 423 K |
LH540215U-35 | 512 x 18/1024 x 18 asynchronous FIFO | Sharp | PLCC | 68 | -55°C | 125°C | 423 K |
LH540215U-35 | 512 x 18/1024 x 18 asynchronous FIFO | Sharp | PLCC | 68 | -55°C | 125°C | 423 K |
MA40215 | 16 GHz, Schottky detector diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 150°C | -- |
MA40215-276 | 16 GHz, Schottky detector diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 150°C | -- |
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