| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BS616LV4023BI | 70/100ns 20mA 2.4-3.6V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable | distributor | BGA | 48 | 0°C | 85°C | 219 K |
| CD4023BCN | Buffered Triple 3-Input NAND Gate | Fairchild-Semiconductor | MDIP | 14 | - | - | 68 K |
| CD4023BCSJX | Buffered Triple 3-Input NAND Gate | Fairchild-Semiconductor | SOIC | 14 | - | - | 68 K |
| IW4023BD | Triple 3-input NAND gate, high-voltage silicon-gate CMOS | distributor | SOIC | 14 | -55°C | 125°C | 108 K |
| IW4023BN | Triple 3-input NAND gate, high-voltage silicon-gate CMOS | distributor | Plastic DIP | 14 | -55°C | 125°C | 108 K |
| MC14023BCL | Tripple 3-input NAND gate | Motorola | DIP | 14 | -55°C | 125°C | 327 K |
| MC14023BCP | Tripple 3-input NAND gate | Motorola | PDIP | 14 | -55°C | 125°C | 327 K |
| MC14023BD | Tripple 3-input NAND gate | Motorola | SOIC | 14 | -55°C | 125°C | 327 K |
| SL4023BD | Triple 3-input NAND gate. High-voltage silicon-gate CMOS. | distributor | SOIC | 14 | -55°C | 125°C | 30 K |
| SL4023BN | Triple 3-input NAND gate. High-voltage silicon-gate CMOS. | distributor | DIP | 14 | -55°C | 125°C | 30 K |
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