Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N4030 | 800mW PNP silicon AF medium power amplifier | distributor | - | 3 | -65°C | 200°C | 143 K |
2N4036 | Complementary silicon AF medium power amplifier | distributor | - | 3 | -65°C | 200°C | 147 K |
MASW4030G | DC-4 GHz GaAs DPDT switch | M-A-COM---manufacturer-of-RF | - | - | -55°C | 85°C | 162 K |
OM9403SD | IGBT gate driver | distributor | - | 10 | -40°C | 100°C | 34 K |
RS403L | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward output current 4.0A at Ta=75degC | distributor | - | 4 | -55°C | 150°C | 22 K |
RS403M | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward output current 4.0A at Tc=100degC | distributor | - | 4 | -55°C | 150°C | 24 K |
XC4036XL-1HQ160I | Field programmable gate array. | distributor | - | 160 | -40°C | 100°C | 710 K |
XC4036XL-2HQ160C | Field programmable gate array. | distributor | - | 160 | 0°C | 85°C | 710 K |
XC4036XL-2HQ160I | Field programmable gate array. | distributor | - | 160 | -40°C | 100°C | 710 K |
XC4036XL-3HQ160I | Field programmable gate array. | distributor | - | 160 | -40°C | 100°C | 710 K |
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