| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5407-T3 | 800V, 3.0A silicon rectifier | distributor | - | 2 | -65°C | 125°C | 39 K |
| 1N5407-T3 | 800V, 3.0A silicon rectifier | distributor | - | 2 | -65°C | 125°C | 39 K |
| 1N5407-TB | 800V, 3.0A silicon rectifier | distributor | - | 2 | -65°C | 125°C | 39 K |
| 1N5407-TB | 800V, 3.0A silicon rectifier | distributor | - | 2 | -65°C | 125°C | 39 K |
| 1N5407G | 800 V, 3 A, Glass passivated junction rectifier | distributor | DO | 2 | -65°C | 175°C | 220 K |
| IRF1407L | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 100A. | International-Rectifier | - | 3 | -55°C | 175°C | 159 K |
| IRF1407S | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 100A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 159 K |
| IRF1407S | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 100A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 159 K |
| IW4070BD | Quad exclusive-OR gate, high-voltage silicon-gate CMOS | distributor | SOIC | 14 | -55°C | 125°C | 107 K |
| IW4071BD | Quad 2-input OR gate, high-voltage silicon-gate CMOS | distributor | SOIC | 14 | -55°C | 125°C | 102 K |
| RS407L | 1000 V, 4 A, Single-phase silicon bridge | distributor | RS | 4 | -55°C | 150°C | 49 K |
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