| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HEF4085BD | Dual 2-wide 2-input AND-OR-invert gate | Philips-Semiconductors | DIL | 14 | - | - | 29 K |
| HEF4085BD | Dual 2-wide 2-input AND-OR-invert gate | Philips-Semiconductors | DIL | 14 | - | - | 29 K |
| HEF4085BT | Dual 2-wide 2-input AND-OR-invert gate | Philips-Semiconductors | SO | 14 | - | - | 29 K |
| HEF4086BD | 4-wide 2-input AND-OR-invert gate | Philips-Semiconductors | DIL | 14 | - | - | 41 K |
| HEF4086BD | 4-wide 2-input AND-OR-invert gate | Philips-Semiconductors | DIL | 14 | - | - | 41 K |
| HEF4086BP | 4-wide 2-input AND-OR-invert gate | Philips-Semiconductors | DIL | 14 | - | - | 41 K |
| HEF4086BT | 4-wide 2-input AND-OR-invert gate | Philips-Semiconductors | SO | 14 | - | - | 41 K |
| K4F640811B-JC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 367 K |
| K4F640811B-TC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| K4F640811B-TC-50 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| K4F640811B-TC-60 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
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