| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DAC8408ET | 0-7V; quad 8-bit multiplying CMOS D/A converter with memory. For voltage set points in automatic test equipment | Analog-Devices | CERDIP | 28 | -40°C | 85°C | 215 K |
| DAC8408GP | 0-7V; quad 8-bit multiplying CMOS D/A converter with memory. For voltage set points in automatic test equipment | Analog-Devices | DIP | 28 | 0°C | 70°C | 215 K |
| NDL7408P1K | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P1KC | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P1KD | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P1L | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P1LC | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P1LD | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P2K | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P2KD | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| << [99] [100] [101] [102] [103] 104 [105] [106] [107] [108] [109] >> |
|---|
