| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4E640812C-TC-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E640812C-TC-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E640812C-TC-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E640812C-TCL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E640812C-TCL-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E640812C-TCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4S640832C-TC/L10 | 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 66MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 130 K |
| K4S640832C-TC/L1H | 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 130 K |
| K4S640832C-TC/L1L | 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 130 K |
| K4S640832C-TC/L70 | 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 130 K |
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