| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962H9475408VLA | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish solder. | distributor | DIP | 24 | -55°C | 125°C | 287 K |
| 5962H9475408VLC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold. | distributor | DIP | 24 | -55°C | 125°C | 287 K |
| 5962H9475408VLC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold. | distributor | DIP | 24 | -55°C | 125°C | 287 K |
| 5962H9475408VLX | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish optional. | distributor | DIP | 24 | -55°C | 125°C | 287 K |
| 5962H9475408VXC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold. | distributor | FlatPack | 24 | -55°C | 125°C | 287 K |
| 5962H9475408VXC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold. | distributor | FlatPack | 24 | -55°C | 125°C | 287 K |
| 5962H9475408VXX | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish optional. | distributor | FlatPack | 24 | -55°C | 125°C | 287 K |
| K4S640832E-TC1H | 64Mb synchronous DRAM, 3.3V, LVTTL interface, 100MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 126 K |
| K4S640832E-TC75 | 64Mb synchronous DRAM, 3.3V, LVTTL interface, 133MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 126 K |
| K4S640832E-TL75 | 64Mb synchronous DRAM, 3.3V, LVTTL interface, 133MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 126 K |
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