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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N5408GGlass passivated rectifierdistributor-2-65°C175°C411 K
BU408D7Ampere NPN power transistordistributor-3-65°C150°C107 K
DG408CJImproved, 8-channel CMOS analog multiplexerMaxim-Integrated-ProducsPlastic DIP160°C70°C374 K
DG408CYImproved, 8-channel CMOS analog multiplexerMaxim-Integrated-ProducsNarrow SO160°C70°C374 K
K4F640812D-JC/L8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle.Samsung-ElectronicSOJ320°C70°C368 K
K4F640812D-TC/L8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle.Samsung-ElectronicTSOP (II)320°C70°C368 K
K4S640832D-TC/L1012M x 8bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 66 MHz (CL=2&3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C128 K
K4S640832D-TC/L1H12M x 8bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C128 K
K4S640832D-TC/L1L12M x 8bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C128 K
K4S640832D-TC/L8012M x 8bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C128 K
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