| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GS840E18T-100 | 100MHz 12ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 629 K |
| GS840E18T-100I | 100MHz 12ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 629 K |
| GS840E18T-150 | 150MHz 10ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 629 K |
| GS840E18T-166 | 166MHz 8.5ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 629 K |
| GS840E18T-180 | 180MHz 8ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 629 K |
| R6221640ES | 1600V, 400A fast recovery single diode | distributor | - | - | - | - | 807 K |
| TC1240ECH | Positive doubling charge pump with shutdown | Microchip-Technology-Inc- | - | 6 | -40°C | 85°C | 858 K |
| TC1240ECHTR | Positive doubling charge pump with shutdown | Microchip-Technology-Inc- | - | 6 | -40°C | 85°C | 858 K |
| TCN4040E-2.5ENB | Precision micropower shunt voltage reference. Output voltage 2.5 V. Voltage tolerance, temp. coefficient grade +-2.0%, 150ppm/degC max (E grade). | TelCom-Semiconductor-Inc- | - | 3 | 0°C | 70°C | 127 K |
| TCN4040E-2.5EZB | Precision micropower shunt voltage reference. Output voltage 2.5 V. Voltage tolerance, temp. coefficient grade +-2.0%, 150ppm/degC max (E grade). | TelCom-Semiconductor-Inc- | TO92 | 3 | 0°C | 70°C | 127 K |
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