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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTB40N10ETMOS E-FET power field effect transistorMotorolaDPAK4-55°C150°C192 K
MTP40N10ETMOS E-FET power field effect transistorMotorola-4-55°C150°C160 K
NM27C040N100 4,194,304 Bit (512K x 8) High Performance CMOS EPROMFairchild-SemiconductorMDIP32--111 K
NM27C240N100 4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy]Fairchild-SemiconductorMDIP40--96 K
RF1S40N10SM40A, 100V, 0.040 Ohm, N-Channel Power MOSFETsIntersil-Corporation----51 K
RFG40N1040A, 100V, 0.040 Ohm, N-Channel Power MOSFETsIntersil-Corporation----51 K
RFG40N10LE40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETsIntersil-Corporation----413 K
RFP40N1040A, 100V, 0.040 Ohm, N-Channel Power MOSFETsIntersil-Corporation----51 K
RFP40N1040A, 100V, 0.040 Ohm, N-Channel Power MOSFETsIntersil-Corporation----51 K
RFP40N10LE40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETsIntersil-Corporation----413 K
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