| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AQV410EH | PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Through hole terminal. Tube packing style. | distributor | - | 6 | -40°C | 85°C | 54 K |
| AQV410EHA | PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tube packing style. | distributor | - | 6 | -40°C | 85°C | 54 K |
| AQV410EHAX | PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 1/2/3-pin side | distributor | - | 6 | -40°C | 85°C | 54 K |
| AQV410EHAZ | PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 4/5/6-pin side | distributor | - | 6 | -40°C | 85°C | 54 K |
| AQV410EHAZ | PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 4/5/6-pin side | distributor | - | 6 | -40°C | 85°C | 54 K |
| KM44C4103CKL-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 376 K |
| KM44C4103CSL-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 376 K |
| KM44C4103CSL-6 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 376 K |
| LD4100 | EEPR4 read/write controller | distributor | TQFP | 100 | - | - | 511 K |
| SI4410DY | 30 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 8 | -55°C | 150°C | 266 K |
| SI9410DY | 30 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 8 | -55°C | 150°C | 266 K |
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